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Here are the detailed specifications for the G18N40ABG chip:
Technical Parameters
- Drain-Source Voltage (VDSS): 400 V
- Gate-Source Voltage (VGSS): ±30 V
- Continuous Drain Current (ID): 18 A (@ TC = 25°C)
- Pulsed Drain Current (IDM): 72 A
- Avalanche Current (IAR): 18 A
- Single-Pulse Avalanche Energy (EAS): 1000 mJ
- Repetitive Avalanche Energy (EAR): 30 mJ
- Peak Diode Recovery dv/dt: 10 V/ns
- Power Dissipation (PD): 38.5 W (TO-252, @ TC = 25°C)
- On-Resistance (RDS(on)):
- Typical: 0.18 Ω (@ VGS = 10 V, ID = 9 A)
- Maximum: 0.24 Ω (@ VGS = 10 V, ID = 9 A)
- Gate Threshold Voltage (VGS(th)): 2.0 V – 4.0 V
- Input Capacitance (Ciss): 2500 pF (Typical, @ VDS = 25 V, VGS = 0 V, f = 1 MHz)
- Output Capacitance (Coss): 280 pF (Typical)
- Reverse Transfer Capacitance (Crss): 23 pF (Typical)
- Total Gate Charge (QG): 50 nC (Typical, @ VGS = 10 V, VDS = 0.5×VDSS, ID = 18 A, RG = 5 Ω)
- Gate-Source Charge (QGS): 15 nC (Typical)
- Gate-Drain Charge (QGD): 18 nC (Typical)
- Turn-on Delay Time (td(on)): 21 ns (Typical)
- Rise Time (tr): 22 ns (Typical) ns (typical)
- Turn-off delay time (td(off)): 62 ns (typical)
- Fall time (tf): 22 ns (typical)
- Body diode forward voltage (VSD): 1.5 V (typical, @ IF = IS, VGS = 0 V)
- Body diode continuous current (IS): 18 A
- Body diode pulsed current (ISM): 72 A
- Reverse recovery time (trr): 200 ns (typical)
- Reverse recovery charge (QRR): 0.8 µC (typical)
- Operating junction temperature range: -55°C to +150°C
- Storage temperature range: -55°C to +150°C
- Thermal resistance (RθJC): 3.3°C/W (TO-252, junction-to-case)
- Compliance: RoHS compliant, lead-free
Pin Definitions (TO-252 / DPAK)
Pin Name Function
1 Gate (G) Gate, control input
2 Drain (D) Drain, power output (heatsink internally connected to drain)
3 Source (S) Source, ground/return
Typical Application Circuit
1. AC-DC Switching Power Supply (Flyback Topology)
```
AC Input
│
├──┬──┐
│ │ │
│ Rectifier/ │
│ Filter │
│ │ │
│ └──┤
│ │
├─────┤
│ │
├─D───┤──→ +400V DC
│ G18│
│N40ABG│
├─G───┤ Transformer
│ │ │
PWM │ ├──→ Secondary Rectification/Filtering → VOUT
Control│ │
│ │ │
└──┬──┘ │
│ │
S │
│ │
└───────┘
│
GND
```
- Features: 400V voltage rating suitable for 220V AC Bus voltage after rectification; low RDS(on) reduces conduction losses.
2. DC-DC Boost Converter
```
VIN (+12V)
│
├──┬──┐
│ │ │
│ L1 │ 100µH
│ │ │
│ └──┤
│ │
├─────┤
│ │
├─D───┤──→ VOUT (+48V)
│ G18│
│N40ABG│
├─G───┤ D1
│ │ │
PWM │ C2
Control│ │
│ │ │
└──┬──┘ │
│ │
S │
│ │
└───────┘
│
GND
```
- Features: 400V voltage rating supports high output voltage; fast switching characteristics improve efficiency.
3. Motor Drive (Half-Bridge Topology)
```
VDC (+400V)
│
├──┬──┐
│ │ │
│ Q1 │ G18N40ABG (High-side)
│ │ │
│ └──┤
│ │
├──┬──┤
│ │
├──┴──→ Motor
│
├──┬──┤
│ │ │
│ Q2 │ G18N40ABG (Low-side)
│ │ │
│ └──┘
│ │
└──┬──┘
│
GND
```
- Features: Half-bridge configuration for driving DC motors or single-phase inverters; 400V voltage rating supports high-voltage applications. Key Characteristic Curves
Parameter Condition Typical Value
RDS(on) vs. VGS ID = 9 A 0.18 Ω @ VGS = 10 V
RDS(on) vs. ID VGS = 10 V 0.18 Ω @ ID = 9 A
VGS(th) vs. TJ — −7 mV/°C temperature coefficient
Ciss vs. VDS VGS = 0 V 2500 pF @ VDS = 25 V
Notes
- Compatibility: The G18N40ABG is an N-channel MOSFET with a gate threshold of 2.0–4.0 V, suitable for 10 V gate drive; for 3.3 V/5 V logic drive, verify the VGS(th) margin and use a gate driver if necessary.
- Mounting Instructions:
- In the TO-252 / DPAK package, the heatsink tab is internally connected to the drain; consider electrical isolation or common-potential heat dissipation during PCB layout.
- Recommended copper pad area ≥ 6 cm² to reduce thermal resistance.
- High-current applications (>10A) It is recommended to add thermal vias to conduct heat to internal copper layers or an external heatsink.
- For inductive loads (motors, transformers), a freewheeling diode must be connected in parallel, or the internal body diode utilized; however, since the body diode has a relatively slow reverse recovery time (200 ns), an external fast-recovery diode is recommended for high-frequency applications.
- Soldering temperature: Reflow peak temperature of 260°C for ≤ 10 seconds; manual soldering iron temperature ≤ 350°C for ≤ 5 seconds.
- Technical Support: For further technical assistance, please refer to ON Semiconductor application notes or contact an authorized distributor.
Summary
The G18N40ABG is a high-performance N-channel power MOSFET manufactured by ON Semiconductor. Housed in a TO-252 surface-mount package, it features a 400V voltage rating, 18A continuous current capability, and extremely low on-resistance (0.18 Ω @ VGS = 10V). Its fast switching characteristics (turn-on delay of 21 ns, rise time of 22 ns) and 1000 mJ single-pulse avalanche energy rating ensure high utility and reliability in high-voltage power electronics applications, such as switching power supplies, DC-DC converters, motor drives, and inverters. As a representative model of the 18N40 series, the G18N40ABG balances conduction and switching losses, serving as a widely adopted power switching solution in the 400V/18A class.
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