10pcs Original IRFBA1405P TO220 IRFBA1405P MOS Field Effect Tube 55V 174A
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Below are detailed information about the IRFBA1405P chip:
Technical Parameters
- Maximum drain-source voltage (Vdss): 55 V
- Maximum gate source voltage (Vgs): 20 V
- Maximum drain current (Id): 174 A
- Maximum power consumption (Pd): 330 W
- Maximum junction temperature (Tj): 175 °C
- On-resistance (Rds(on)): 4.3 - 5.0 mΩ
- Total gate charge (Qg): 170 nC
- Rise time (tr): 190 ns
- Fall time (tf): 110 ns
- Input capacitance (Ciss): 5480 pF
- Output capacitance (Coss): 1210 pF
- Reverse transfer capacitance (Crss): 280 pF
Characteristics
- High Power Handling Capability: Capable of handling up to 330W for high power applications.
- Low on-resistance: Low on-resistance of 4.3 - 5.0 mΩ helps to minimize power loss and improve system efficiency.
- Fast switching speed: 190 ns rise time and 110 ns fall time ensure fast switching operation and reduce switching losses.
- High operating temperature: Capable of operating at junction temperatures up to 175°C, making it suitable for high-temperature applications in automotive and industrial environments.
- Multiple protection features: Includes dynamic dv/dt rating, full avalanche rating, and allows for repetitive avalanche operation at maximum junction temperature.
Precautions
- COMPATIBILITY: Before purchasing, please check if the chip is compatible with your application.
- Installation Instructions:
- Make sure the chip is mounted in the correct orientation and the pins are aligned with the pads on the board.
- During the soldering process, pay attention to temperature control to avoid overheating and damaging the chip.
- Take appropriate static protection measures to avoid static electricity damage to the chip.
- Technical Support: If further technical support is required, it is recommended to contact the supplier or manufacturer.
SUMMARY
The IRFBA1405P is a high-performance N-channel MOSFET manufactured by Infineon Technologies with high power handling capability, low on-resistance and fast switching speed. It is widely used in automotive electronics and industrial motor drives for a variety of high-power and high-temperature environment application scenarios.
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