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The following is detailed information about the AO6800 chip, organized in a specific format:
- Features:
- 30V dual N-channel MOSFET.
- Utilizes advanced trench technology to provide excellent on-resistance (RDS(ON)) and low gate charge.
- Supports gate drive voltages as low as 2.5V.
- Suitable for high-efficiency power conversion and electronic device switch control.
Technical Specifications
- Package type: SOT-23-6L
- Number of pins: 6 pins
- Operating voltage range: Up to 30V
- Continuous drain current (ID): 3.4A (at 25°C)
- Maximum power dissipation (PD): 1.15W (at 25°C)
- On-resistance (RDS(ON)):
- 60mΩ @ VGS=10V, ID=3.4A
- 70mΩ @ VGS=4.5V, ID=3.4A
- 90mΩ @ VGS=2.5V, ID=2.4A
- Threshold voltage (VGS(th)): Maximum 1.5V @ ID=250μA
- Gate charge (Qg):
- 4.7nC @ VGS=4.5V
- 10nC @ VGS=10V
- Operating temperature range: -55°C to +150°C
- Storage temperature range: -55°C to +150°C
- Reverse recovery charge (Qrr): 2.55nC
- Inter-electrode capacitance:
- Input capacitance (Ciss): 235pF @ VDS=15V, VGS=0V
- Output capacitance (Coss): 35pF @ VDS=15V, VGS=0V
- Feedback capacitance (Crss): 18pF @ VDS=15V, VGS=0V
Notes
- Compatibility: Before purchasing, please confirm that the chip is compatible with your application.
- Installation instructions:
- Ensure that the power supply voltage meets the chip specifications.
- Use appropriate decoupling capacitors to reduce noise.
- Operate the device within the specified temperature range.
- Technical Support: For further technical support, contact the supplier or manufacturer.
Summary
The AO6800 is a high-performance dual N-channel MOSFET produced by Alpha & Omega Semiconductor Inc., suitable for various electronic applications, particularly excelling in power management and signal control. Its low on-resistance and low gate charge make it highly practical and reliable in high-efficiency power conversion.
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